LM741 Operational amplifier– in this tutorial you will learn how to use the LM741 Operational amplifier. LM741 Operational Amplifier, Description: LM741 Op Amp as the voltage comparator “complete designing explanation:.LM741 Operational amplifier datasheet Specs.LM741 Op amp IC Pinout / Pin configuration.Lm741 operational amplifier Applications.LM741 Operational Amplifier, Description:.R θJA is guaranteed by design while R θJA is determined by the user’s board design.Ģ.Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.ġ.R θJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Maximum Continuous Drain–Source Diode Forward Current V DD = 30 V, I D = 0.28 A, V GS = 10 V, R GEN = 6 ΩĭRAIN − SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Gate Threshold Voltage Temperature Coefficient Thermal Resistance, Junction−to−Ambient (Note 1)īreakdown Voltage Temperature Coefficient If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Stresses exceeding those listed in the Maximum Ratings table may damage the device. Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 s Operating and Storage Junction Temperature Range Refer to our Tape and Reel Packaging Specification Including part orientation and tape sizes, please †For information on tape and reel specifications, *Date Code orientation and/or position may vary depending upon manufacturing location. (Note: Microdot may be in either location)
Compact Industry Standard SOT−23 Surface MountPackage.High Density Cell Design for Extremely Low R DS(on).These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
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